Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-05-02
1991-10-15
Ryan, Patrick J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505702, 505703, 505704, 428426, 428457, 428688, 428689, 428698, 428699, 428700, 428901, 428930, B32B 900
Patent
active
050574841
ABSTRACT:
A single crystal oxide superconductor and the method of producing the same. One face of a substrate is coated with an oxide superconductor for forming an oxide superconductor layer. Then, the oxide superconductor layer is heated so that the oxide superconductor has a single crystalline structure.
REFERENCES:
Adachi et al., Jpn. J. Appl. Phys., 18(8):1637-38 (1979).
Adachi et al., Jpn. J. Appl. Phys., 18(1):193-94 (1979).
Adachi et al., Jpn. J. Appl. Phys., 17(11):2053-54 (1978).
Appl. Phys. Letters, 51(25), Dec. 21, 1987, Chien et al., pp. 2155-2157, Effect of Noble Metal Buffer Layers on SC YBa.sub.2 Cu.sub.3 O.sub.7 Thin Films.
Journ. Crys. Growth, 85(1987), 615-618, Thin Film Growth of YBa.sub.2 Cu.sub.3 O.sub.x from Nitrate Solutions, Heary et al.
Jap. Journ. Appl. Physics, vol. 26, No. 5, May, 1987, pp. L763-L765, Some Probs. in Prep. of SC Oxide Films on Ceramic Substrate, Koinuma et al.
Fukuda Osamu
Hidaka Hiroshi
Sato Masahiro
Shiota Takao
Takahashi Koichi
Fujikura Ltd.
Ryan Patrick J.
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