Single crystal of semiconductive material on crystal of insulati

Details Single crystal of semiconductive material on crystal of insulati Single crystal of semiconductive material on crystal of insulati

1978-05-18

1979-12-04

Esposito, Michael F.

Stock material or miscellaneous articles

Composite

Of silicon containing

428428, 428539, 428432, 156605, 156606, 156607, 156DIG61, 156 78, 427 86, 427 87, 148175, H01L 2120, B01J 1702

Patent

active

041773217

ABSTRACT:
A grown crystal structure comprises a single crystal of semiconductive material having a given lattice constant grown on a spinel crystal substrate having a different lattice constant. A substance is added to one or both of the crystals and has suitable properties relative to the crystals to effectively reduce lattice strains developed in the grown crystal structure due to mismatch of the lattice constants of both crystals.

REFERENCES:
patent: 3413145 (1968-11-01), Robinson
patent: 3414434 (1968-12-01), Marascuit
patent: 3424955 (1969-01-01), Seiter et al.
patent: 3493443 (1970-02-01), Cohen
patent: 3589936 (1971-06-01), Tramposch
patent: 3655439 (1972-04-01), Seiter
patent: 3658586 (1972-04-01), Wang
patent: 3736158 (1973-05-01), Cullen
patent: 3796597 (1974-03-01), Porter
Edel et al., Stres Relief by Counterdoping, IBM Tech. Disclosure, vol. 13, No. 3, p. 632 (1970).
Edel, Stacking . . . Layer, IBM Tech. Disclosure Bull., vol. 14, No. 5, (10-1971), p. 1654.
Light et al., Stress Free Hetero-Epitaxial Layer, IBM Tech. Discl. Bull., vol. 12, No. 9, p. 1496 (1970).
Zaininger et al., MOS . . . Low Aluminum-Rich Spinel, Solid State Electronic, vol. 13, p. 943 (1970).

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