Single crystal of compound semiconductor of groups III-V with lo

Details Single crystal of compound semiconductor of groups III-V with lo Single crystal of compound semiconductor of groups III-V with lo

1985-02-21

1986-04-22

O'Keefe, Veronica

Alloys or metallic compositions

Gallium, indium, or thallium base

148 33, 148400, 148404, 428620, H01L 2920, C22C 1200

Patent

active

045841748

ABSTRACT:
More than two isoelectronic impurities are doped in a host crystal of compound semiconductors of groups III-V.
An impurity atom forms a covalent bond with a host atom. Although the real bond length "A" between an impurity and a host atom in the crystal cannot be measured, it can be surmised from the bond length "a" between two atoms in a pure two-component crystal consisting of the elements same with the impurity atom and the host atom. The bond length between host atoms in the crystal is called standard bond length "a.sub.0 ". Definite and measurable bond length "a" replaces the real unknown bond length "A". The impurity whose replaced bond length "a.sub.1 " is shorter than "a.sub.0 " is called an under-impurity. The impurity whose replaced bond length "a.sub.2 " is longer than "a.sub.0 " is called an over-impurity.
In this invention at least one under-impurity and at least one over-impurity are doped in the host single crystal. From the concentrations "x.sub.1 " and "x.sub.2 ", and the replaced bond lengths "a.sub.1 " and "a.sub.2 " of the isoelectronic under- and over-impurities, an arithmetic average "a" of the bond lengths is calculated. This invention requires that the total concentrations of the isoelectronic impurities should be larger than 10.sup.18 atoms/cm.sup.3 and the difference between "a" and "a.sub.0 " should be less than plus or minus 2%. Size effects of under- and over-impurities compensate each other in the double-impurity-doped crystal.

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"Effect of Doping on Formation of Dislocation Structure in Semiconductor Crystals" Journal of Crystal Growth 52(1981), 391-403, M. G. Mil'Vidsky et al.
"Dislocation-Free GaAs and InP Crystals by Isoelectronic Doping" Journal of Crystal Growth 61(1983), 417-424, G. Jacob et al.

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