Single crystal of compound semiconductor of groups III-V with lo

Details Single crystal of compound semiconductor of groups III-V with lo Single crystal of compound semiconductor of groups III-V with lo

1985-03-21

1987-06-02

Barr, Josephine L.

Compositions

Barrier layer device compositions

Group iii element containing binary compound; e.g., ga, as

252512, 252518, 252623R, 357 61, 357 63, 148 33, 148 331, C04B 3500, H01B 102, H01B 106

Patent

active

046701761

ABSTRACT:
More than two impurities are doped in a host crystal of compound semiconductors. One of the impurities is an anisoelectronic impurity. One or more than one impurities are isoelectronic impurities. The anisoelectronic impurity determines the electronic property and the carrier density of the semiconductor. Isoelectronic impurity does not change the electronic property. But isoelectronic impurity has an effect of impurity hardening.
The impurity atom forms a covalent bond with a host atom. The bond length between an impurity and a host atom differs from the standard bond between host atoms. Although the real bond lengths between an impurity atom and a host atom cannot be measured, the Inventors think the difference of bond lengths generate dislocation or other lattice defects of crystal. The real bond length "A" between an impurity and a host atom in an impurity-doped crystal may be surmized from the corresponding bond length "a" or "b" in a two-component crystal consisting of the impurity element and the host element.
Definite and measurable bond length "a" or "b" replaces the real unknown bond length "A". The impurity whose replaced bond length "a" or "b" is larger than the standard bond length "a.sub.0 " between host atoms is called an over-impurity. The impurity whose replaced bond length "a" or "b" is smaller than "a.sub.0 " is called an under-impurity. At least one under-impurity and at least one over-impurity must be doped. The arithmetic average "a" of the bond lengths between the impurity atoms and the host atoms should not differ from "a.sub.0 " by more than 1%. Size effects of under- and over-impurities compensate each other in the double-impurity-doped crystal. Dislocations or other lattice defects are reduced.

REFERENCES:
patent: 3496118 (1970-02-01), Willardson et al.
patent: 4409134 (1983-10-01), Yamazaki
Mil'Vidsky et al., "Effect of Doping on Formation of Dislocation Structure in Semiconductor Crystals", Journal of Crystal Growth 52(1981) 396-403.
Jacob et al., "Dislocation-Free GaAs and InP Crystals by Isoelectronic Doping", Journal of Crystal Growth 61(1983) 417-424.

Affiliated with

Also associated with

Rating

Single crystal of compound semiconductor of groups III-V with lo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single crystal of compound semiconductor of groups III-V with lo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single crystal of compound semiconductor of groups III-V with lo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-611989