Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Patent
1993-03-26
1995-02-07
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
117 49, 117 50, 117944, C30B 1316
Patent
active
053867971
ABSTRACT:
A single crystal of a compound comprises which easily decomposes at a temperature around the melting point and evaporates at least a part of the compound having a volume of 5 cc or more and a composition deviation of respective elements from the stoichiometric composition of the compound being within the range of .+-.5% in terms of weight ratio. Also, a process for preparing a single crystal of a compound comprises the steps of deaerating and sealing powder of a starting material for the single crystal in a sealable capsule, sintering the powder by subjecting to heat treatment (HIP treatment) at a temperature 1/2 or higher of the melting point in terms of the absolute temperature while applying high pressure to a sealed material of the powder, deaerating and sealing the sintered body in a sealable capsule made of a similar high melting point substance and having an inner shape corresponding to the shape of the sintered body, and preparing a single crystal by subjecting a sealed material of the sintered body to heat treatment at a temperature of the melting point of the starting material of the single crystal under pressure. As the single crystal of a compound, high quality single crystals with a large size such as RE.sub.2 O.sub.2 S or REVO.sub.4 (RE is a rare earth element) can be obtained.
REFERENCES:
patent: 3833862 (1974-09-01), Wickersheim et al.
patent: 4752424 (1988-06-01), Matsuda et al.
patent: 4863882 (1989-09-01), Matsuda et al.
patent: 5166948 (1992-11-01), Gavrilovic et al.
L. E. Sobon et al., "Growth and Properties of Lanthanum Oxysulfide Crystals," Journal of Applied Physics, vol. 42, No. 8 (Jul. 1971), pp. 3049-3053.
Kabushiki Kaisha Toshiba
Kunemund Robert
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