Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1995-11-09
1998-07-28
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117 22, 117931, C30B 1520
Patent
active
057857539
ABSTRACT:
In a single-crystal manufacturing method, after a single crystal is grown, the crystal is separated from the molten melt and gradually cooled while suspended immediately above the surface of the melt. During this cooling, a measure, which produces solidification of the melt, is locally applied. As a result, the solidification of the melt is selectively forced so that at least the melt forms a crust and prevents the crystal, should it fall, from becoming immersed in molten melt. This measure also protects the crystal from any sudden release of heat such as tends to occur if the melt becomes supercooled prior to the onset of crystallization.
REFERENCES:
patent: 5251059 (1993-10-01), Kouta
patent: 5454345 (1995-10-01), Kouta et al.
"Mestastable Crystal Growth of the Low Temperature Phase of Barium Metaborate From the Melt"; Kozuki, et al; J. Cryst Growth 114 (1991) pp. 683-686.
"Flux Growth of Large Single Crystals of Low Temperature Barium Metaborate"; Jiang, et al.; J. of Cryst Growth 79 (1986) pp. 963-969.
Okamoto Tsutomu
Taguchi Yasujiro
Garrett Felisa
Kananen Ronald P.
Sony Corporation
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