Single crystal ingot and method for growing the same

Details Single crystal ingot and method for growing the same Single crystal ingot and method for growing the same

1997-08-01

1999-08-10

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117911, C30B 1520

Patent

active

059353210

ABSTRACT:
A single crystal ingot (10) is grown by first inserting a single crystal seed (14) into a melt (11) and pulling the seed (14) at a high pulling rate to grow a single crystal neck (15). The pulling rate is then altered to grow an overhang (18) with a diameter greater than that of the single crystal neck (15). An elongated body (19) is formed below the overhang (18) by adjusting the pulling rate. A multi-arm fixture (30) grabs the overhang (18) to alleviate the tensile and torsional stresses in the single crystal neck (15) that may be caused by the weight and the rotational motion of the single crystal ingot (10).

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Journal of Applied Physics, vol. 30, No. 4, Apr. 1959, "Growth of Silicon Crystals Free from Dislocations" by William C. Dash; pp. 459-474.

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