Single-crystal hexaborides and method of preparation

Details Single-crystal hexaborides and method of preparation Single-crystal hexaborides and method of preparation

1978-11-27

1981-04-07

Padgett, Benjamin R.

Compositions

Electrically conductive or emissive compositions

Metal compound containing

252518, 313346R, H01B 106

Patent

active

042605253

ABSTRACT:
An aluminum flux method of preparing binary, ternary, and quaternary single crystal metal hexaborides. The single crystals are prepared by mixing a metal oxide, carbonate, or nitrate compound with boron powder in an amount of aluminum which will solubilize the boron at a reaction temperature of from about 1200.degree. C. to about 1600.degree. C. The mixture is held at the reaction temperature for a sufficient time to form the desired single crystal hexaboride.

REFERENCES:
patent: 2639399 (1953-05-01), Lafferty
patent: 3932314 (1976-01-01), Kawabe et al.
patent: 4054946 (1977-10-01), Fenis et al.
patent: 4055780 (1977-10-01), Kawai et al.
"Single Crystal Growth of Mixed Hexaborides", Journal of Crystal Growth, Olsen 3-1978, pp. 287-290, vol. 44.
Futamoto et al., Japan Journal Appl. Phys., vol. 14, No. 9, pp. 1263-1266, 1975, and Aita et al., Japan Journal Appl. Physics; vol. 13, No. 2, p. 391, 1974.
Fisk et al., Mat. Res. Bull., vol. 7, pp. 285-288, 1972.

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