Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2009-03-24
2011-12-27
Kunemund, Bob M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S030000, C117S217000, C117S218000
Reexamination Certificate
active
08083852
ABSTRACT:
A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.
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Hoshi Ryoji
Iwasaki Atsushi
Miyahara Yuuichi
Sugawara Kosei
Takazawa Masanori
Kunemund Bob M
Oliff & Berridg,e PLC
Shin-Etsu Handotai & Co., Ltd.
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