Single crystal growth method

Details Single crystal growth method Single crystal growth method

1997-01-10

1998-11-24

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 19, 117 30, 117 31, 117 33, C30B 1504

Patent

active

058401156

ABSTRACT:
A method of growing a single crystal of semiconductor using a CZ growth technique, having a step (0<t<t1) wherein a single crystal of semiconductor is pulled while a source material is supplied continuously to maintain a constant amount of semiconductor melt, and a step (t2<t<t3) wherein the supply of source material is halted, and the single crystal of semiconductor is pulled using residual melt from the first step.

REFERENCES:
patent: 5485802 (1996-01-01), Alteknuger et al.
patent: 5488924 (1996-02-01), Horvath et al.
patent: 5690723 (1997-11-01), Napai et al.

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