Single crystal growing method and apparatus

Details Single crystal growing method and apparatus Single crystal growing method and apparatus

1987-09-29

1989-05-23

Doll, John

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

C30B 3500

Patent

active

048329223

ABSTRACT:
In a single crystal growing technique (crystal pulling) a method and apparatus for minimizing impurity contamination and preventing heat convection currents from affecting the solid-melt crystal growing interface which uses a floating baffle plate in the interior of the feed melt containing crucible in order to obtain a single crystal of a compound semiconductor having a high melting point and exhibiting a high dissociation pressure at the said melting point such as a compound semiconductor of Groups III-V, especially GaAs or Gap, the crystal having a small dislocation density. Improvement is made on the shape of the baffle plate and on baffle plate control means, and this baffle plate is combined with selected intra-furnace pressure or heating means or temperature measuring means.

REFERENCES:
patent: 3033660 (1962-05-01), Okkerse
patent: 3621213 (1971-11-01), Jen et al.
patent: 4096024 (1978-06-01), Dusserre et al.
patent: 4167554 (1979-09-01), Fisher
patent: 4196171 (1980-04-01), Watanabe et al.
patent: 4267154 (1981-05-01), Mueller et al.
patent: 4314128 (1982-02-01), Chitre
patent: 4497777 (1985-02-01), Kojima
patent: 4556784 (1985-12-01), Nakai
Pamplin, B., "Crystal Growth", Pergamon Press, 1980, pp. 276-281.

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