Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1999-07-21
2000-03-14
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117201, 117202, 117208, 117216, C30B 3500
Patent
active
06036775&
ABSTRACT:
A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
REFERENCES:
patent: 4211600 (1980-07-01), Cole
patent: 4269652 (1981-05-01), Yancey
patent: 4367200 (1983-01-01), Mimura et al.
patent: 4565600 (1986-01-01), Ricard
patent: 4647437 (1987-03-01), Stormont et al.
patent: 4664742 (1987-05-01), Tomizawa et al.
patent: 4711695 (1987-12-01), Stormont et al.
patent: 5030315 (1991-07-01), Washizuka et al.
patent: 5492078 (1996-02-01), Alterkruger et al.
Yoon et al., "Crystal Growth of dislocation-free LiNb0.sub.3 single crystals by micro pulling down method," Journal of Crystal Growth, vol. 142, No. 3/4, Sep. 1994, Amsterdam NL, pp. 339-343, XP000468428.
Oguri et al., "Growth of MgO doped LiNb0.sub.3 single crystal fibres by a novel drawing down method," Journal of Crystal Growth, vol. 110, No. 4, Apr. 1991, Amsterdam NL, pp. 669-767, XP000242065.
Yoon et al., "Morphological aspects of potassium lithium niobate crystals with acicular habit grown by the micro-pulling down method," Journal of Crystal Growth, vol. 144, No. 3/4, Dec. 1994, Amsterdam NL, pp. 207-212, XP000483660.
Patent Abstracts of Japan, vol. 11, No 163 (C-424) May 26, 1987 & JP 61 291487 A (Sumitomo Electric Ind. Ltd) Dec. 22, 1986.
Honda Akihiko
Imaeda Minoru
Imai Katsuhiro
Imanishi Yuichiro
Kokune Nobuyuki
Hiteshew Felisa
NGK Insulators Ltd.
LandOfFree
Single crystal-growing method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Single crystal-growing method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single crystal-growing method and apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-165088