Single crystal growing apparatus and single crystal growing meth

Details Single crystal growing apparatus and single crystal growing meth Single crystal growing apparatus and single crystal growing meth

1998-03-10

2000-09-12

Hiteshew, Pelisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117208, 117217, 117911, C30B 3500

Patent

active

061172340

ABSTRACT:
The object of the present invention is to provide an apparatus and a method for preventing dropping of a single crystal having large diameter and heavy weight in a chamber with reduced pressure and for pulling it in reliable and safe manner. After a seed crystal 24a is immersed in Si melt in a quartz crucible 14, the seed crystal is pulled up, and a neck portion 1a with small diameter is formed under the seed crystal 24a, and a spherical constricted portion 1b is formed under the neck portion 1a, whereby a tip 23a of a single crystal support 23 is opened so that it does not come into contact with the constricted portion 1b under pulling operation. When a second neck portion 1c under the constricted portion 1b is moved up to a standby position of the tip 23a of the single crystal support 23, rotation of an upper chamber 12 is started, and a rotating shaft 22 is rotated clockwise, and the tip 23a of the single crystal support 23 is closed to grip a site under the constricted portion 1b and the single crystal support 23 is moved up at the same rate as that of the wire 3 by rotating a ball screw shaft 21.

REFERENCES:
patent: 5126113 (1992-06-01), Yamagishi et al.
patent: 5879448 (1999-03-01), Urano et al.
patent: 5882397 (1999-03-01), Iino et al.

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