Single crystal growing apparatus and method

Details Single crystal growing apparatus and method Single crystal growing apparatus and method

1990-05-01

1993-02-16

Kunemund, Robert

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

118641, 1566161, 1566162, 1566164, 156DIG70, 422248, 427557, B01D 1900

Patent

active

051869110

ABSTRACT:
A horizontal Bridgman single crystal growing apparatus using a direct monitoring electric furnace suitable for a single crystal growing of III-V, II-VI group compound semiconductor materials (InP, CdTe, etc.) including a gallium arsenide (GaAs). The apparatus is composed of: a heater wire being formed around a quartz tube for supporting, a cylindrical double quartz tube arranged with cooling water or gas inlet and outlet for circulation externally and coated with gold thin film on the internal wall surface thereof, thereby the high temperature heating over 1240.degree. C. is possible to obtain within a short period of time and also the cooling is possible, and whole process of the single crystal growing can be observed directly with naked eyes.

REFERENCES:
patent: 3259815 (1966-07-01), Johnson et al.
patent: 3481711 (1969-12-01), Maruyama
patent: 3767473 (1973-10-01), Ayel et al.
patent: 3877883 (1975-04-01), Berkman et al.
"Gradient Freeze Single-Crystal Growth", S. E. Miller; Battelle Memorial Institute, pp. 274-278.
"Infrared Heating for People and Products", General Electric; pp. 1-23.

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