Single crystal growing apparatus

Details Single crystal growing apparatus Single crystal growing apparatus

1989-04-25

1990-09-18

Straub, Gary P.

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

422248, 1566161, 1566162, 1566164, 15662076, 156DIG70, C30B 1100, C30B 2940, C30B 3500

Patent

active

049577115

ABSTRACT:
A horizontal Bridgman single crystal growing apparatus using a direct monitoring electric furnace suitable for a single crystal growing of III-V, II-VI group compound semiconductor materials (InP, CdTe, etc.) including a gallium arsenide (GaAs). The apparatus is composed of: a heater wire being formed around a quartz tube for supporting, a cylindrical double quartz tube arranged with cooling water or gas inlet and outlet for circulation externally and coated with gold thin film on the internal wall surface thereof, thereby the high temperature heating over 1240.degree. C. is possible to obtain within a short period of time and also the cooling is possible, and whole process of the single crystal growing can be observed directly with naked eyes.

REFERENCES:
patent: 3481711 (1969-12-01), Maruyama
patent: 3767473 (1973-10-01), Ayel et al.
patent: 3877883 (1975-04-01), Berkman et al.
patent: 4737233 (1988-04-01), Kamgar et al.
"Infrared Heating For People and Products", General Electric Lamp Division, 1974, pp. 1-23.
Pfann, "Zone Melting", pp. 62-63, J. Wiley and Son, Inc., New York, N.Y. 1958.

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