Single crystal growing apparatus

Details Single crystal growing apparatus Single crystal growing apparatus

1996-12-20

1998-07-28

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117200, 117208, 117900, C30B 3500

Patent

active

057857580

ABSTRACT:
In a single crystal growing apparatus which pulls a semiconductor single crystal rod 14 from a semiconductor melt 13 contained in a quartz crucible 5 to grow the semiconductor single crystal, quartz crucible 5 is designed such that it can move up and down so as to maintain the level of semiconductor melt 13 constant and a main heater 7 which can move up and down and a subheater 10 which can move up and down are provided to heat semiconductor melt 13 so that the thermal environment of semiconductor melt 13 is maintained substantially constant.

REFERENCES:
patent: 4650540 (1987-03-01), Stoll
patent: 4784715 (1988-11-01), Stoll
patent: 5551978 (1996-09-01), Akashi et al.

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