Single crystal, dual wafer, tunneling sensor or switch with...

Details Single crystal, dual wafer, tunneling sensor or switch with... Single crystal, dual wafer, tunneling sensor or switch with...

2005-10-04

2005-10-04

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S050000, C438S052000, C438S053000

Reexamination Certificate

active

06951768

ABSTRACT:
A method of making a micro electromechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. At least one of the mating structures includes a protrusion extending from a major surface of at least one of said substrates. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

REFERENCES:
patent: 5015850 (1991-05-01), Zdeblick et al.
patent: 5729074 (1998-03-01), Shiomi et al.
patent: 5994750 (1999-11-01), Yagi
patent: 6126311 (2000-10-01), Schuh
patent: 6211532 (2001-04-01), Yagi
patent: 6229190 (2001-05-01), Bryzek et al.
patent: 6337027 (2002-01-01), Humphrey
patent: 6555404 (2003-04-01), Kubena et al.
patent: 6580138 (2003-06-01), Kubena et al.
patent: 6630367 (2003-10-01), Kubena et al.
U.S. Appl. No. 10/233,874, filed Aug. 19, 2002, Kubena et al.
U.S. Appl. No. 10/358,471, filed Feb. 4, 2003, Kubena et al.
U.S. Appl. No. 10/429,988, filed May 6, 2003, Kubena et al.
U.S. Appl. No. 10/639,289, filed Aug. 11, 2003, Kubena et al.
Zavracky, P.M., et al., “Design and Process Considerations For A Tunneling Tip Accelerometer,”J. Micromech. Microeng., vol. 6, No. 3, pp. 192-199 (Sep. 1996).

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