Chemistry of inorganic compounds – Carbon or compound thereof – Elemental carbon
Reexamination Certificate
2007-04-10
2007-04-10
Kunemund, Robert (Department: 1722)
Chemistry of inorganic compounds
Carbon or compound thereof
Elemental carbon
C117S084000, C117S088000, C117S089000, C117S086000, C117S104000, C117S929000
Reexamination Certificate
active
10977108
ABSTRACT:
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.
REFERENCES:
patent: 3850591 (1974-11-01), Wentorf, Jr.
patent: 4034066 (1977-07-01), Strong et al.
patent: 4767608 (1988-08-01), Matsumoto et al.
patent: 4816286 (1989-03-01), Hirose
patent: 4905227 (1990-02-01), Lechner et al.
patent: 4940015 (1990-07-01), Kobashi et al.
patent: 5110579 (1992-05-01), Anthony et al.
patent: 5127983 (1992-07-01), Imai et al.
patent: 5135730 (1992-08-01), Suzuki et al.
patent: 5223721 (1993-06-01), Iida et al.
patent: 5273731 (1993-12-01), Anthony et al.
patent: 5278431 (1994-01-01), Das
patent: 5290392 (1994-03-01), Lau et al.
patent: 5300188 (1994-04-01), Tessmer et al.
patent: 5314652 (1994-05-01), Simpson et al.
patent: 5360479 (1994-11-01), Banholzer et al.
patent: 5387310 (1995-02-01), Shiomi et al.
patent: 5399247 (1995-03-01), Carey et al.
patent: 5404835 (1995-04-01), Yoder
patent: 5419276 (1995-05-01), Anthony et al.
patent: 5443032 (1995-08-01), Vichr et al.
patent: 5474021 (1995-12-01), Tsuno et al.
patent: 5488350 (1996-01-01), Aslam et al.
patent: 5496596 (1996-03-01), Herb et al.
patent: 5540904 (1996-07-01), Bovenkerk et al.
patent: 5551903 (1996-09-01), Kumar et al.
patent: 5587013 (1996-12-01), Ikegaya et al.
patent: 5587210 (1996-12-01), Marchywka et al.
patent: 5589231 (1996-12-01), Hauge et al.
patent: 5592053 (1997-01-01), Fox et al.
patent: 5614019 (1997-03-01), Vichr et al.
patent: 5628824 (1997-05-01), Vohra et al.
patent: 5635258 (1997-06-01), Chen et al.
patent: 5653952 (1997-08-01), Suzuki et al.
patent: 5656827 (1997-08-01), Kang et al.
patent: 5670796 (1997-09-01), Nishibayashi et al.
patent: 5713915 (1998-02-01), Van Heugten et al.
patent: 5776323 (1998-07-01), Kobashi
patent: 5803967 (1998-09-01), Plano et al.
patent: 5807433 (1998-09-01), Poncelet et al.
patent: 5961717 (1999-10-01), Kamo et al.
patent: 6140148 (2000-10-01), Prins
patent: 6162412 (2000-12-01), Fujimori et al.
patent: 6342195 (2002-01-01), Roy et al.
patent: 6433474 (2002-08-01), Horiuchi et al.
patent: 6582513 (2003-06-01), Linares et al.
patent: 6599178 (2003-07-01), Gluche et al.
patent: 6858080 (2005-02-01), Linares et al.
patent: 6887144 (2005-05-01), D'Evelyn et al.
patent: 2003/0131787 (2003-07-01), Linares et al.
patent: 2003/0205190 (2003-11-01), Linares et al.
patent: 2005/0056206 (2005-03-01), Linares et al.
patent: 2005/0056208 (2005-03-01), Linares et al.
patent: 2005/0056209 (2005-03-01), Linares et al.
patent: 2005/0061233 (2005-03-01), Linares et al.
patent: 2005/0066884 (2005-03-01), Linares et al.
patent: 2005/0085079 (2005-04-01), Linares et al.
patent: 2005/0109262 (2005-05-01), Linares et al.
patent: 2005/0109264 (2005-05-01), Linares et al.
patent: 2005/0109265 (2005-05-01), Linares et al.
patent: 2005/0109266 (2005-05-01), LInares et al.
patent: 2005/0109267 (2005-05-01), Linares et al.
patent: 2005/0109268 (2005-05-01), Linares et al.
patent: 19718517 (1998-11-01), None
patent: 0390209 (1990-10-01), None
patent: 0507497 (1992-10-01), None
patent: 573943 (1993-12-01), None
patent: 0573943 (1993-12-01), None
patent: 0582397 (1994-02-01), None
patent: 0588260 (1994-03-01), None
patent: 0635584 (1995-01-01), None
patent: 0879904 (1998-11-01), None
patent: 0918100 (1999-05-01), None
patent: 2228949 (1990-09-01), None
patent: 3-142104 (1991-06-01), None
patent: 10081590 (1998-03-01), None
patent: WO-0196633 (2001-12-01), None
patent: WO-0196634 (2001-12-01), None
Anthony, et al., “Thermal diffusivity of isotropically enriched 12c diamond”,Physical Review B, 1104-1111.
Burns, R. C., “Synthesis of Diamond From the Vapor Phase”,The Properties of Natural and Synthetic Diamond, J.E. Field, editor Academic Press, (1992),396-422.
Ebert, W., et al., “Epitaxial Diamond Schottky Barrier Diode With On/Off Current Ratios in excess of 10(7) at High Temperatures”,Proceeding of IEDM, Published by IEEE, (1994),419-422.
Eden, R., “Applications in Computers”,Handbook of Industrial Diamonds and Diamond Films, (1998), 1073-1102.
Field, J. E., et al., “The Proerties of Natural and Synthetic Diamond”,Adademic Press, (1992).
Hui, P., et al., “Temperature Distribution in a heart Dissipation System Using a Cylindrical Diamond heat Spreader on a Copper Block”,J. Appl. Phys. 75(2), (Jan. 15, 1994).
Hunn, J D., et al., “Ion beam and laser-assisted micromachining of singke-srystal diamond”,Solid State Technology, Cowan Publ. Corp.Washington, US, vol. 37, No. 12, (Dec. 1, 1994), 57-60.
McCauley, T S., et al., “Homoepotaxial Diamond Film Deposition on a Briliant Cut Diamond Anvil”,Applied Physics Letters, American Instute of Physics, New York, Us Vo. 66, No. 12, (Mar. 20, 1995), 1486-1488.
Nepsha, V. I., “Heat Capacity, Conductivity, and Thermal Coefficient of Expansion”,Handbook of Industrial Diamond and Diamond Films, M.A. Perlas, G. Popovici, and L. K. Bigelow, Editora Marcel Dekker, Inc., (1998), 147-192.
Perng, et al., “Modification in the blood structure and related commission characteristics of defective diamond film doped with boron”,Applied Surface Science 142, (1999),494-498.
Plano, M A., et al., “Characterization of a thick homoepitaxial CVD diamond film”,Diamond, SIC and Nitride Wide Bandgap Semiconductors, Symposium, Diamond, SIC and Nitride Wide Bandgap Semiconductors, Symposium, San Francisco, CA USA, Pittsburg, PA USA, Mater. Res. Soc, USA, (Apr.-Aug. 1994),307-312.
Sahli, S. , et al., “Piezoelectric Gauge Factor Measure at Different Fields and Temperatures”,Applications of Diamond Films and Related Materials, A. Feldman, et. al. editors, NIST Special Publications 885, 95-98.
Samlenski, R. , et al., “Incorporation of Nitrogen in CHemical Vapor Deposition Diamond”,Applied Physics Letters, American Institute of Physics, New York, US, vol. 67, No. 19, (Nov. 6, 1995),2798-2800.
Sato, Y., “Synthesis of Diamond From the Vapor Phase”,The Properties of Natural and Synthetic Diamond, J.E. Field, editor, Academic Press, (1992),423-469.
Seal, M. , “High Technology Applications of Diamond”,The Properties of Natural and Synthetic Diamond, Edited by J.E. Field, Academic Press, (1992),608-616.
Sussman, R. S., et al., “CVD Diamond: a New Engineering Material for Thermal. Dielectric and optical Applications”,Industrial Diamond Review, 58(578), (1998),69-77.
Doering Patrick J.
Linares Robert C.
Apollo Diamond, Inc.
Kunemund Robert
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Single crystal diamond tool does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Single crystal diamond tool, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single crystal diamond tool will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3735960