Single crystal conversion control

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

Reexamination Certificate

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Details

C117S007000, C117S010000, C117S931000

Reexamination Certificate

active

06299681

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention relates generally to the conversion of a polycrystalline article into a single crystal, and, more specifically, to the control thereof.
U.S. Pat. No. 5,427,051—Maxwell et al. discloses an apparatus and method for the solid-state conversion of polycrystalline alumina to single crystal sapphire. In that process, a local energy source, such as a carbon dioxide laser, heats one end of an alumina tube to a temperature approaching the melting temperature of alumina to initiate and automatically propagate solid-state single crystal conversion along the length of the tube. To prevent thermal shock, laser heat is applied in a ring around the tube by rotating the tube, and in one trial the tube is slightly translated in addition.
The configuration of an article and the application of the heat thereon affect whether or not single crystal conversion is obtained without undesirable thermal shocking.
Accordingly, there is a need for an improved conversion and control process for conversion of a polycrystalline article into a single crystal.
BRIEF SUMMARY OF THE INVENTION
A polycrystalline article is converted to a single crystal in a solid-state process. Heat is applied at a first end of the article to effect a predetermined spatial temperature profile thereat having a maximum temperature approaching a melting temperature of the article. The temperature profile is maintained to initiate conversion at the first end. The heat is moved along the article toward an opposite second end to correspondingly propagate the conversion along the article.


REFERENCES:
patent: 4234358 (1980-11-01), Celler et al.
patent: 4469551 (1984-09-01), Laude
patent: 5365875 (1994-11-01), Asai et al.
patent: 5427051 (1995-06-01), Maxwell et al.
patent: 5432122 (1995-07-01), Chae
patent: 5454347 (1995-10-01), Shibata et al.
patent: 5591668 (1997-01-01), Maegawa et al.
patent: 19546992 (1995-12-01), None
patent: 01018985 (1989-01-01), None
patent: 0625594 (1994-11-01), None
patent: 0645475 (1995-03-01), None
patent: 0645477 (1995-03-01), None
patent: 0667404 (1995-08-01), None
patent: 04-294523 (1992-10-01), None
U.S. Patent application Ser. No. 09/206,721, filed Dec. 7, 1998, (Docket RD-22721).

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