Single component monomer for silicon nitride deposition

Details Single component monomer for silicon nitride deposition Single component monomer for silicon nitride deposition

1978-08-02

1980-04-29

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 94, B05D 306

Patent

active

042006660

ABSTRACT:
Method of preparing silicon nitride film by glow discharge from the decomposition of liquid trisilylamine, (SiH.sub.3).sub.3 N, which is a volatile monomer. In this connection, the use of a single monomer as diluted with an inert gas enables greater uniformity to be achieved in the deposition of silicon nitride films. Further, the presence of Si-N bonds in the monomer enables more control and better stoichiometry in the deposited films.

REFERENCES:
patent: 3424661 (1969-01-01), Androshuk et al.

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