Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated
Reexamination Certificate
2007-05-15
2007-05-15
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Encapsulated
C257S079000, C257S103000
Reexamination Certificate
active
11064675
ABSTRACT:
A single-chip white light emitting device, including: a substrate, a buffer layer, a first conductive cladding layer, a second conductive cladding layer, at least one broad-spectrum blue-complimentary light quantum dot emitting layer and at least one blue light emitting layer. The buffer layer is disposed over the substrate. The first conductive cladding layer is disposed over the buffer layer. The broad-spectrum blue-complimentary light quantum dot emitting layer is disposed between the first conductive cladding layer and the second conductive cladding layer. The blue-complimentary light quantum dot emitting layer includes plural quantum dots with an uneven character distribution, so as to increase FWHM of emission wavelength of the quantum dot emitting layer. The blue light emitting layers is disposed between the first and second conductive cladding layers, such that mixing of blue light and blue-complimentary light would generate white light. According to the single-chip white light emitting device of this invention, a single LED laminar structure is provided therein with a broad-spectrum blue-complimentary light quantum dot emitting layer and a blue light emitting layer, which are mixed to form an Al(1−x−y)InyGaxN single-chip white light emitting device with a high CRI, and high emission and are capable of color temperature modulation.
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Christensen O'Connor Johnson & Kindness PLLC
Genesis Photonics Inc.
Nguyen Cuong
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