Single-chip system having electrostatic discharge (ESD) protecti

Details Single-chip system having electrostatic discharge (ESD) protecti Single-chip system having electrostatic discharge (ESD) protecti

1997-11-28

1999-07-13

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Including additional component in same, non-isolated structure

257355, H01L 27102

Patent

active

059230797

ABSTRACT:
To protect a system efficiently from static electricity and electrostatic discharge (ESD) and thereby prevent the system from becoming defective, a system formed on a first conductivity-type semiconductor substrate includes a pad for receiving a signal, a protection element connected to the pad, and a discharge line connected to the protection element. The protection element includes a single bipolar transistor portion and at least one diode portion located adjacent to the bipolar transistor portion.

REFERENCES:
patent: 5521414 (1996-05-01), Palara
patent: 5581104 (1996-12-01), Lowrey et al.
patent: 5594265 (1997-01-01), Shimizu et al.
patent: 5670814 (1997-09-01), Wu et al.
patent: 5710452 (1998-01-01), Narita
patent: 5721656 (1998-02-01), Wu et al.
Charvaka Duvvury, et al, "Achieving Uniform nMOS Device Power Distribution for Sub-micron ED Reliability", IEEE, Apr. 1992, pp. 6.1.1-6.1.4.

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