Supports: racks – Special article – Platelike
Reexamination Certificate
2001-07-12
2003-03-25
Stodola, Daniel P. (Department: 3634)
Supports: racks
Special article
Platelike
C211S040000, C211S181100, C414S935000, C206S832000
Reexamination Certificate
active
06536608
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to semiconductor manufacturing. More specifically, the present invention relates to vertical wafer boats having Y shaped column racks (or columns) made from a single casting.
BACKGROUND OF THE INVENTION
Although other materials may be used, e.g., Silicon-Germanium (SiGe) or Galium Arsenide (GaAs), Silicon (Si) is presently the most important semiconduct or for the electronics industry. Very Large Scale Integrated (VLSI) circuit technology (i.e., up to about 100,000 devices per chip), and Ultra Large Scale Integrated (ULSI) circuit technology (i.e., more than 100,000 and in some cases exceeding one billion devices per chip) being based almost entirely on silicon.
It is critical that the fabrication of VLSI and ULSI circuits which take place on silicon substrates possess very high crystalline perfection or purity. That is, in crystalline solids, the atoms which make up the solid are spatially arranged in a periodic fashion. If the periodic arrangement exists throughout the entire solid, the substance is defined as being formed of a single crystal. The periodic arrangement of the atoms in the crystal is called the lattice. Very high crystalline perfection requires that the silicon substrate possess a minimum of impurities and structural defects throughout its single crystal silicon lattice.
Generally, raw material, e.g., quartzite, is refined into electronic grade polysilicon (EGS) and melted. A silicon seed crystal is than used to grow a single crystal silicon ingot from the molten EGS. The ingot is than precisely sliced and polished into silicon wafers. The silicon wafers provide the substrates upon which VLSI and ULSI circuits are ultimately built through a complex sequence of wafer fabrication processes.
The increasing size of silicon wafers is one of the most obvious trends in silicon material technology. Presently, 300 mm diameter wafers are expected to ultimately replace most 150 mm and 200 mm wafer applications. It is also predicted that 400 mm wafers will probably be introduced in the not too distant future. The use of larger diameter wafers for maintaining productivity presents several major challenges to semiconductor manufactures. For example, facilities with equipment capable of handling the larger wafers, e.g., vertical furnaces, must be built. New patterning techniques must be developed to print smaller feature sizes over larger areas. The larger wafers must also be thicker to increase their resistance to warping and other structural deformations. Moreover, the larger wafers are also heavier, requiring the use of automated wafer transport systems.
As the silicon wafers become bigger and heavier, the problem of preventing impurities and structural defects to the lattice, i.e., of maintaining very high crystalline perfection, becomes even more critical. Two such structural defects, which becomes especially problematic in 300 mm silicon wafers and larger, are that of “back side damage” and “slip” in the lattice structure.
Back side damage is when a wafer moves across a surface of a wafer support device, causing scratches in the back side of the wafer.
Slip in silicon wafers is a function of the stress applied to the wafer. This stress can be mechanical (e.g., frictionally induced) and/or thermal. As the wafers are stressed, the crystal lattice undergoes elastic deformation that disappears as the solid crystal returns to its original position upon release of the stress. However, severe stress leads to slip, which is the plastic or permanent deformation in the crystal lattice, which remains when the stress is released. Slip occurs when the elastic limit (or yield strength) of the silicon is exceeded and the lattice becomes permanently misaligned.
Slip is common during high temperature processing of silicon wafers in heat treatment furnaces (furnacing operations), as thermal stress is proportional to the processing temperature. The transition temperature from brittle to ductile behavior of the wafer is generally within the range of about 720 to 1000 degrees C. Therefore slip, whether induced by thermal or mechanical stress, becomes especially problematic at process temperatures above 720 degrees C.
Wafer boats are wafer support devices, which are subjected to furnacing operations during semiconductor wafer processing. Horizontal wafer boats are typically designed to support a horizontal row of wafers, which are inserted into a horizontal furnace tube for high temperature processing. Vertical wafer boats are typically designed to support a vertical stack of wafers, which are inserted into a vertical furnace tube. Generally, for large diameter silicon wafers, e.g., 300 mm, vertical wafer boats are more commonly used. This is because vertical furnaces have a smaller foot print than horizontal furnaces and therefore take up less of the expensive manufacturing space. Additionally, vertical furnaces generally demonstrate better temperature control than horizontal furnaces.
Wafer boats are generally composed of ceramic materials. Ceramic materials, which are joined by ionic or covalent bonds, are typically composed of complex compounds containing both metallic and non metallic elements. Ceramics typically are hard, brittle, high melting point materials with low electrical and thermal conductivity, good chemical and thermal stability, and high compressive strengths. Examples of ceramic materials are quartz, silicon carbide (SiC) and recrystalized SiC. One such recrystalized SiC is available from Saint-Gobain Ceramics & Plastics, Inc. of Worcester, Mass., under the trade name CRYSTAR®. This material is a silicon carbide ceramic that has been impregnated with high purity silicon metal.
Referring to
FIG. 1
, a typical prior art vertical wafer boat
10
generally includes three or four support rods
12
extending vertically upwards from a generally circular horizontal base
14
, and spaced radially along the periphery of the base. The rods
12
have a plurality of cantilevered wafer support arms (or teeth)
16
supported only at one end, which extend inwardly toward the center of the base
14
to define a series of slots therebetween. The slots are sized to receive the silicon wafers, which are supported by the arms
16
during furnacing operations.
Problematically for larger wafers, the prior art wafer support arms
16
provide most of their support at the outer periphery of the wafer. Accordingly, most of the weight of the wafer is unsupported and distributed toward its center. Therefore, during high temperature thermal processing, the center of the wafers tend to sag, promoting slip in the crystal lattice of the wafer.
Because of the geometry of the circular wafers, substantially half of the weight of the wafer, i.e., the inner wafer weight, is distributed within a circular area that is 70 percent the radius (R) of the wafer. Conversely, half of the weight of the wafer, i.e., the outer wafer weight, is distributed over a doughnut shaped area that has an inner radius of 0.7 R and an outer radius of 1.0 R. As a result, supporting the wafers at or about the 0.7 R circular boundary region of a wafer, e.g., from 0.6 R to 0.8 R, balances the inner and outer wafer weights and greatly reduces the potential for sagging during high temperature thermal processing.
Current prior art boat designs require deep slots, thereby making the arms
16
of the support rods
12
long enough to extend to the 0.7 R point. However, manufacturing this geometry is cumbersome due to the precise machining required and the inherently low yield rates. Also the added length of the cantilevered arms impose a large moment force at the single support point where the arm attaches to the rod body, unduly increasing the probability of failure or breakage. Moreover, because the arms provide support at only three or four small discrete areas on the wafers, the possibility of back side damage is enhanced for the heavier wafers.
Ideally, providing actual structural support at the center region of a wafer would eliminate the problem of sag in the center. However, the a
McCormick Paulding & Huber LLP
Novosad Jennifer E.
Saint-Gobain Ceramics & Plastics, Inc.
Stodola Daniel P.
LandOfFree
Single cast vertical wafer boat with a Y shaped column rack does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Single cast vertical wafer boat with a Y shaped column rack, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single cast vertical wafer boat with a Y shaped column rack will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3046586