Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2009-08-24
2011-11-08
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C438S194000
Reexamination Certificate
active
08053782
ABSTRACT:
A photodetector which uses single or multi-layer graphene as the photon detecting layer is disclosed. Multiple embodiments are disclosed with different configurations of electrodes. In addition, a photodetector array comprising multiple photodetecting elements is disclosed for applications such as imaging and monitoring.
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Avouris Phaedon
Lin Yu-Ming
Mueller Thomas
Xia Fengnian
Alexanian Vazken
International Business Machines - Corporation
Toledo Fernando L
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