Single-alignment-level lithographic technique for achieving self

Details Single-alignment-level lithographic technique for achieving self Single-alignment-level lithographic technique for achieving self

1992-09-11

1994-01-04

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, 430312, 430313, 430316, 430317, 430318, 430323, 430325, 430328, 430942, G03F 100, G03F 720, G03F 900

Patent

active

052758966

ABSTRACT:
A phase-shifting lithographic mask is made by a procedure involving only a single patterned electron, ion, or photon beam bombardment of a resist layer. The bombardment is arranged to produce three kinds of regions in the resist: no dosage, low dosage, and high dosage. These three regions in the resist are then utilized--in conjunction with an ordinary wet development step followed by either a silylation or an optical flooding technique, and thereafter by another ordinary wet development step--to pattern the resist layer and thereby to enable forming, by dry or wet etching, an underlying double layer consisting of a patterned opaque layer and a patterned transparent phase-shifting layer, the phase-shifting layer being located on, or being part of, a transparent substrate.

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Hinsberg, W. D. et al., "A Lithographic Analog of Color Photography: Self-Aligning Photolithography Using a Resist with Wavelength-Dependent Tone," J. of Imaging Science, vol. 33 (Jul./Aug. 1989) No. 4, Springfield, Va., pp. 129-135.
Flagello, D. et al., "A Single Expose Double Develop (SEED) Process for Self-Aligned Lithographic Applications," 8226 Microelectronic Engineering, 9 (1989) May, pp. 47-52.
Nitayama, A. et al, International Electron Device Meeting (IEDM) Technical Digest, pp. 57-60 (3.3.1-3.3.4) Dec., 1989.
Levenson, M. D. et al, IEEE Transactions on Electron Devices, vol. ED-29, pp. 1828-1836 (1982).
Terasawa, T. et al., SPIE, vol. 1088, Optical/Laser Microlithography II (1989), pp. 25-33.

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