Simultaneously forming fully implanted DMOS together with enhanc

Details Simultaneously forming fully implanted DMOS together with enhanc Simultaneously forming fully implanted DMOS together with enhanc

1979-12-20

1982-05-11

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148187, 156652, 357 23, 357 91, H01L 2126, H01L 744, H01L 2128

Patent

active

043291864

ABSTRACT:
A semiconductor fabrication process and the resulting structure is disclosed for an FET device with a precisely defined channel length. Two process embodiments are described to make a diffused MOS device which does not require the use of p-type diffusions to obtain 1 micron channel length. Instead, to accurately define such micron-range channel lengths, a lateral etching technique is employed. To obtain well controlled threshold voltages, the channels are ion implanted. Thus the enhancement portion of the diffused MOS device channel is defined by an etching step instead of a diffusion step, thereby producing a channel having a length which is shorter and a threshold voltage which is better controlled than those which have been available in the prior art.

REFERENCES:
patent: 3940288 (1976-02-01), Takagi et al.
patent: 4085498 (1978-04-01), Rideout
patent: 4148054 (1979-04-01), Hart et al.
patent: 4171229 (1979-10-01), Simi et al.
patent: 4182636 (1980-01-01), Dennard et al.
patent: 4221044 (1980-09-01), Godejahn et al.
patent: 4249968 (1981-02-01), Gardiner et al.
patent: 4280855 (1981-07-01), Bertin et al.
patent: 4294002 (1981-10-01), Jambotkar et al.

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