Simultaneously doped light-emitting diode formed by liquid phase

Details Simultaneously doped light-emitting diode formed by liquid phase Simultaneously doped light-emitting diode formed by liquid phase

1984-02-09

1985-03-26

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569L, 29576E, 148172, 148173, H01L 21208

Patent

active

045071578

ABSTRACT:
A light emitting diode and a method for the manufacture thereof is described. The diode may be formed by liquid phase epitaxial growth from a single melt including p and n conductivity type dopants. The p conductivity type layer grows first followed by the n conductivity layer.

REFERENCES:
patent: 3752713 (1973-08-01), Sakuta et al.
patent: 3755013 (1973-08-01), Hollan
patent: 3773571 (1973-11-01), Rupprecht et al.
patent: 4052252 (1977-10-01), Lockwood et al.
patent: 4055443 (1977-10-01), Akimov et al.
patent: 4131904 (1978-12-01), Ladany

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