Simultaneous unipolar multispectral integrated technology...

Details Simultaneous unipolar multispectral integrated technology... Simultaneous unipolar multispectral integrated technology...

2007-11-13

2009-10-27

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S186000, C257S431000, C257S465000, C257S466000, C257SE27133, C257SE27134, C257SE27135

Reexamination Certificate

active

07608906

ABSTRACT:
A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range, a second photodiode with a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with photons of a second wavelength range, and a readout integrated circuit electrically coupled to the first n-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second n-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode to contact the second n-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode by a first passivating insulator.

REFERENCES:
patent: 6476374 (2002-11-01), Kozlowski et al.
patent: 6727521 (2004-04-01), Merrill
patent: 6803557 (2004-10-01), Taylor et al.
patent: 6930336 (2005-08-01), Merrill
patent: 7419844 (2008-09-01), Lee et al.
patent: 2003/0209652 (2003-11-01), Fujii et al.
patent: 2003/0218120 (2003-11-01), Shibayama

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