Simultaneous two-wavelength p-n-p-n Infrared detector

Details Simultaneous two-wavelength p-n-p-n Infrared detector Simultaneous two-wavelength p-n-p-n Infrared detector

1996-03-19

1999-09-28

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257442, 257443, 257460, 257466, 25037001, 25037008, G01J 102, G01T 124, H01L 3100

Patent

active

059593393

ABSTRACT:
An array (41) is comprised of a plurality of radiation detectors (10, 10') each of which includes a first photoresponsive diode (D1) having an anode and a cathode that is coupled to an anode of a second photoresponsive diode (D2). The first photoresponsive diode responds to electromagnetic radiation within a first band of wavelengths and the second photoresponsive diode responds to electromagnetic radiation within a second band of wavelengths. Each radiation detector further includes a first electrical contact (26) that is conductively coupled to the anode of the first photoresponsive diode; a second electrical contact (28) that is conductively coupled to the cathode of the first photoresponsive diode and to the anode of the second photoresponsive diode; and a third electrical contact (30) that is conductively coupled to a cathode of each second photoresponsive diode of the array. The electrical contacts are coupled during operation to respective bias potentials. The first electrical contact conducts a first electrical current induced by electromagnetic radiation within the first predetermined band of wavelengths, and the second electrical contact conducts a second electrical current induced by electromagnetic radiation within the second predetermined band of wavelengths less an electrical current induced by electromagnetic radiation within the first predetermined band of wavelengths.

REFERENCES:
patent: 4582952 (1986-04-01), McNeely et al.
patent: 4753684 (1988-06-01), Ondris et al.
patent: 4847489 (1989-07-01), Dietrich
patent: 5113076 (1992-05-01), Schulte
patent: 5149956 (1992-09-01), Norton
patent: 5380669 (1995-01-01), Norton
patent: 5457331 (1995-10-01), Kosai et al.
patent: 5479032 (1995-12-01), Forrest et al.
patent: 5559336 (1996-09-01), Kosai et al.
"Infinite-Melt Vertical Liquid-Phase Epitaxy of HgCdTe From Hg Solution: Status and Prospects", Journal of Crystal Growth 86 (1988) 161-172, North-Holland, Amsterdam.
"Some Properties of Photovoltaic Cd.sub.x Hg.sub.l--x Te Detectors for Infrared Radiation", J.M. Pawlikowski and P. Becla, Jan. 1975.
"HgCdTe dual-band infrared photodiodes grown by molecular beam epitaxy", J.M. Arias, M. Zandian, G. M. Williams, E.R. Blazejewski, R.E. DeWames, and J.G. Pasko, J. Appl. Phys. 70(8), Oct. 15, 1991.

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