Measuring and testing – Fluid pressure gauge – Combined
Patent
1998-09-18
2000-02-08
Oen, William
Measuring and testing
Fluid pressure gauge
Combined
G01L 700
Patent
active
060216727
ABSTRACT:
A non-intrusive method for in-situ measurement of etching chamber and optionally etch rate inside a plasma etching chamber is disclosed for use in the fabrication of semiconductor devices. The method includes the step of selecting at least one plasma species as a probe which can be F, CF.sub.2, or CO, then measuring the emission intensity at a predetermined wavelength corresponding to the plasma species so selected. Preferably, the emission intensity is measured at wavelength of 686 nm (corresponding to the transition of F from 3s.sup.3 P.sub.3 to 3p.sup.4 P.sub.3), 269 or 239 nm, corresponding to the transitions from A.sup.1 B.sub.1 (v'=0) to X.sup.1 A.sub.1 (v"=0) and from A.sup.1 B.sub.1 (v'=9) to X.sup.1 A.sub.1 (v"=0) for CF.sub.2, respectively, and 693 or 505 nm, corresponding to the transitions from d.sup.3 .PI.(v'=2) to a.sup.3 .PI.(v"=2) and from d.sup.3 .PI.(v'=7) to a.sup.3 .PI.(v"=2) for CO, respectively. By properly selecting the measurement site, etching rate and etching pressure can be obtained simultaneously.
REFERENCES:
patent: 5458754 (1995-10-01), Sathrum et al.
patent: 5474650 (1995-12-01), Kumihashi et al.
patent: 5571366 (1996-11-01), Ishii et al.
Liauh W. Wayne
Oen William
Windbond Electronics Corp.
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