Simultaneous fabrication of CMOS transistors and bipolar devices

Details Simultaneous fabrication of CMOS transistors and bipolar devices Simultaneous fabrication of CMOS transistors and bipolar devices

1975-10-21

1977-09-27

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29578, 148 15, 148187, 357 4, 357 23, 357 35, 357 49, 357 53, 357 91, H01L 2184, H01L 21265

Patent

active

040509656

ABSTRACT:
A process for the simultaneous fabrication of CMOS transistors and bipolar devices on the same integrated circuit. The process follows the standard Silicon-Gate Deep Depletion technology up through gate definition. An additional mask step is included for definition of the base implant region. After the base diffusion the process again follows the standard approach resulting in a new structure which permits the fabrication of CMOS/SOS as well as a bipolar driver transistor.

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Zuleeg, R., "Silicon-on-Sapphire . . . IC's", Electronics, Mar. 20, 1967, pp. 106-108.
Zuleeg et al., "Thin-film Lateral Bipolar. . . Structure" Electronics Letters, vol. 3, No. 4, Apr. 1967, pp. 137-139.

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