Simultaneous doped layers for semiconductor devices

Details Simultaneous doped layers for semiconductor devices Simultaneous doped layers for semiconductor devices

1982-03-12

1985-06-11

Edlow, Martin H.

Coherent light generators

Particular component circuitry

Optical pumping

357 30, 357 63, 357 67, 372 44, 372 45, H01L 3300, H01L 2714, H01L 29167, H01L 2348

Patent

active

045232121

ABSTRACT:
An indium phosphide semiconductor layer or layers are simultaneously doped with groups II-VI elements such as zinc and selenium. These simultaneously (acceptor/donor) doped layers offer improved characteristics when used as an ohmic contact capping layer of indium phosphide or as the active laser region in long wavelength light emitting diodes composed of indium phosphide. The simultaneous doping is achieved through the use of liquid phase epitaxy.

REFERENCES:
patent: 2979428 (1961-04-01), Jenny et al.
patent: 3465159 (1969-09-01), Stern
patent: 3573114 (1971-03-01), Marinace
patent: 3602777 (1971-08-01), Berman
patent: 3684930 (1972-08-01), Collins et al.
patent: 3914785 (1975-10-01), Ketchow
patent: 4024569 (1977-05-01), Hawrylo et al.
patent: 4105955 (1978-08-01), Hayashi et al.
patent: 4131904 (1973-12-01), Ladany et al.
patent: 4195308 (1980-03-01), Hawrylo
patent: 4323911 (1982-04-01), Campbell et al.
patent: 4340966 (1982-07-01), Akiba et al.
patent: 4355396 (1982-10-01), Hawrylo et al.
patent: 4366568 (1982-12-01), Shimuzu et al.
Nelson et al., "Effect in 0.88.mu." Appl. Phys. Lttr., vol. 4, No. 11, Jun. 1, 1964, pp. 192-194.
Dousmanis et al., "Effect in Diodes" Appl. Phys. Lt., vol. 3, No. 8, Oct. 15, 1963, pp. 133-135.
Brown, Effective Distribution Coeff. of Some Group VI Elements in Indium Phosphide Grown by LPE, Solid State Electronics, 1974, 505 to 507.
Williams, Indium Phosphide, Journal of Electrochemical Society, 1973, 1741-1749.
Yim, Solid Solution in the Pseudobinary (III-V)-(II-VI) Systems and Their Optical Energy Cups, Journal of Applied Physics, 1969, pp. 2617-2623.

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