Simultaneous buried strap and buried contact via formation...

Details Simultaneous buried strap and buried contact via formation... Simultaneous buried strap and buried contact via formation...

2011-03-22

2011-03-22

Ha, Nathan W (Department: 2814)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257SE21081

Reexamination Certificate

active

07910451

ABSTRACT:
A node dielectric, an inner electrode, and a buried strap cavity are formed in the deep trench in an SOI substrate. A buried layer contact cavity is formed by lithographic methods. The buried strap cavity and the buried layer contact cavity are filled simultaneously by deposition of a conductive material, which is subsequently planarized to form a buried strap in the deep trench and a buried contact via outside the deep trench. The simultaneous formation of the buried strap and the buried contact via enables formation of a deep trench capacitor in the SOI substrate in an economic and efficient manner.

REFERENCES:
patent: 6964897 (2005-11-01), Bard et al.
patent: 7015526 (2006-03-01), Bonart
patent: 7073139 (2006-07-01), Bard et al.
patent: 2003/0022457 (2003-01-01), Gutsche et al.
patent: 2006/0202249 (2006-09-01), Cheng et al.
Ricardo A.Donaton, etal.—“Design and Fabrication of MOSFET's with a Reverse Embedded SiGe (Rev. e-SiGe) Structure” IEEE (2006).

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