Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2011-03-22
2011-03-22
Ha, Nathan W (Department: 2814)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C257SE21081
Reexamination Certificate
active
07910451
ABSTRACT:
A node dielectric, an inner electrode, and a buried strap cavity are formed in the deep trench in an SOI substrate. A buried layer contact cavity is formed by lithographic methods. The buried strap cavity and the buried layer contact cavity are filled simultaneously by deposition of a conductive material, which is subsequently planarized to form a buried strap in the deep trench and a buried contact via outside the deep trench. The simultaneous formation of the buried strap and the buried contact via enables formation of a deep trench capacitor in the SOI substrate in an economic and efficient manner.
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Ricardo A.Donaton, etal.—“Design and Fabrication of MOSFET's with a Reverse Embedded SiGe (Rev. e-SiGe) Structure” IEEE (2006).
Abate Esq. Joseph P.
Ha Nathan W
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
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