Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-01-31
1999-08-03
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
H01L 21265
Patent
active
059328819
ABSTRACT:
In a computer-implemented simulation method for implanting ions into a semiconductor substrate, a region is defined in a vertical cross-section of the substrate between first and second horizontal lines, the first horizontal line being spaced a distance R.sub.p -N.sigma. from a top surface of the substrate and the second horizontal line being spaced a distance R.sub.p +N.sigma. from the top surface, where R.sub.p is a projected range of implanted ions from the top surface, N is an integer, and .sigma. is a standard deviation of horizontal spread of an impurity profile. An orthogonal coordinate system is then defined by a set of narrowly spaced horizontal parallel lines within the region, a set of widely spaced horizontal parallel lines outside of the region and a set of vertical parallel lines at spacing which increases as a function of distance from opposite vertical edges of the coordinate system. A simulation of ion implantation is performed into the substrate and an impurity profile is obtained using the coordinate system.
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"Models for Implantation into Multilayer Targets", H. Ryssel et al., Appl. Phys., A 41,201-207 (1986).
Berman Jack I.
NEC Corporation
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