Simulation method and system for design of aperture in...

Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system

Reexamination Certificate

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Reexamination Certificate

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07376543

ABSTRACT:
A simulation method designs an aperture to obtain optimum resolution and DOF in consideration of the layout of a circuit pattern of a photomask, and a recording medium in which the simulation method is recorded. The simulation method for designing an aperture in an exposure apparatus including a light source, an optical lens group, a photomask, an aperture, receives the layout information of the photomask. The aperture is divided into a plurality of pixels. The pixels of the aperture are flipped, a photolithography simulation is executed to produce a simulated photoresist pattern, and the shape of the aperture that provides an optimum resolution for the simulated photoresist pattern is searched for. Beneficially, a system is provided to execute the method. Also, beneficially, the simulation method may be stored on a storage medium.

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Geert Vandenbergh et al., “ArF Lithography Options for 100nm Technologies”,Semiconductor Fabtech—14th Edition, pp. 157-165.
F.M. Schellenberg et al., “Adoption of OPC and the Impact on Design and Layout”, Design Automation Conference, Session 7-4, Jun. 19, 2001.
Geert Vandenbergh et al., “ArF Lithography Options for 100nm Technologies”, Semiconductor Fabtech - 14th Edition, pp. 157-165. Feb. 2, 2005.
F.M. Schellenberg et al., “Adoption of OPC and the Impact on Design and Layout”, Design Automation Conference, Session 7-4, Jun. 19, 2001.

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