Simulation method and simulation apparatus for LDMOSFET

Details Simulation method and simulation apparatus for LDMOSFET Simulation method and simulation apparatus for LDMOSFET

2011-07-19

2011-07-19

Rodriguez, Paul L (Department: 2123)

Data processing: structural design, modeling, simulation, and em

Simulating electronic device or electrical system

Circuit simulation

C703S002000

Reexamination Certificate

active

07983889

ABSTRACT:
The drift region for increasing the breakdown voltage in an LDMOSFET is regarded as a resistive element. The potential distribution of the overall device is calculated by obtaining a potential distribution considering the resistance by iterative calculation. A capacitance generated in the drift region is analytically calculated assuming a linear potential distribution. A capacitance generated in the overlap region between the gate electrode and the drift region is calculated by considering the potential from the depletion region to the accumulation region.

REFERENCES:
M.B. Willemsen, et al., “High-Voltage LDMOS Compact Modeling”, NSTI-Nanotech, vol. 3, 2006, pp. 714-719.
Yogesh Singh Chauhan, et al., “Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs”, Tech. Digest IEDM, 2006, 4 Pages.
Mitiko Miura-Mattausch, et al., “HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation”, IEEE Transactions on Electron Devices, vol. 53, No. 9, Sep. 2006, pp. 1994-2007.

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