Simulation apparatus for optimizing sputtering apparatus and sim

Details Simulation apparatus for optimizing sputtering apparatus and sim Simulation apparatus for optimizing sputtering apparatus and sim

1996-09-13

1998-12-15

Teska, Kevin J.

Boots, shoes, and leggings

20429801, G06F 1900

Patent

active

058503560

ABSTRACT:
A simulation apparatus for simulating and optimizing a configuration of a sputtering apparatus including a target surface temperature calculating unit for calculating a temperature of a target surface in consideration of cooling of the target, an atom initial velocity calculating unit for calculating an initial velocity of atoms within the target based on the calculated target surface temperature, an ion incidence rate calculating unit for calculating an incidence rate of the incident ions into the target to determine a position at which the incident ions collide against the target, an atom trajectory calculating unit for obtaining trajectories of atoms within the target based on each of calculation results and a sputtered atom ejection angle distribution unit for extracting sputtered atoms based on the calculation results to obtain ejection angle distribution.

REFERENCES:
S. Valkealahti et al., "Modecular dynamics dimulation of the damage production in AI (110) Surface with slow argon ions", Nuclear Instruments and Methods in Physics Research, B18, 1987, pp. 365-369.
F. Baumann et al., "3D Modeling of sputter and reflow processes for interconnect metals", IEEE, pp. 4.4.1-4.4.4, 1995.
S. Dew et al., "Simulation of Elevated Temperature Aluminum Metallization Using SIMBAD", IEEE, pp. 1599-1606, 1992.
S. Valkealahti et al., "Molecular dynamics Simulation of the Damage . . . Surface with Slow Argon Ions", Nuclear Instruments and Methods in Physics Research, B18, 1987, pp. 365-369.

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