Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-05-31
2005-05-31
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S700000, C257S701000, C257S208000, C257S211000, C257S207000, C257S203000, C257S048000, C257S459000, C257S775000, C257S776000, C257S200000, C257S210000, C257S206000, 36, 36, C716S030000, C716S030000, C716S030000, C361S735000, C029S850000, C438S197000, C438S033000, C438S113000
Reexamination Certificate
active
06900540
ABSTRACT:
An integrated circuit has a metal layer that includes conductors to provide interconnectivity for components of the integrated circuit chip. The metal layer is divided into at least two sections, such that a first section has a preferred direction and the second section has a preferred wiring direction that is different from the first preferred direction. The first and second preferred directions on a single metal layer may consist of any direction. The metal layer may be divided into more than two sections, wherein each section has a preferred wiring direction. Wiring geometries for multi-level metal layers are also disclosed.
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Fujimura Akira
Overhauser David
Teig Steven
Cadence Design Systems Inc.
Stattler, Johansen and Adeli LLP
Williams Alexander Oscar
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