Simulated transistor/diode

Details Simulated transistor/diode Simulated transistor/diode

1984-10-05

1987-07-07

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307296R, 307317R, 323280, G06G 712, H03K 301, H03K 326

Patent

active

046789472

ABSTRACT:
A circuit capable of simulating a transistor or a semiconductor diode with controllably adjusted voltage characteristics contains a main transistor (Q0). An input voltage (V.sub.CS) to a control system (8) is amplified with a gain set by a pair of resistors (R1 and R2) to produce a control voltage (V.sub.C) for the transistor. This downscales the forward voltage characteristics of the circuit from those of the transistor. A floating power supply (10) in series with the control electrode of the transistor permits upscaling or further downscaling of the circuit voltage range.

REFERENCES:
patent: 3541350 (1970-11-01), Luetze
patent: 4500798 (1985-02-01), Pike
P. Gray et al, Analysis and Design of Analog Integrated Circuits (John Wiley and Sons: 1977), pp. 252-254.
J. Gunn, "New Techniques in Power Control," 1970 IEEE ISSCC Dig. Tech. Paps., 19 Feb. 1970, pp. 90-91.

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