Simplified method of producing an epitaxially grown structure

Details Simplified method of producing an epitaxially grown structure Simplified method of producing an epitaxially grown structure

2006-12-04

2009-08-25

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S459000, C257S190000, C257SE21090

Reexamination Certificate

active

07579259

ABSTRACT:
Method to produce a structure consisting of depositing a material by columnar epitaxy on a crystalline face of a substrate (2), of continuing so that the columns (4) give a continuous layer (5). The surface is provided with a period array of bumps (3) on a nanometric scale, each bump (3) having a support zone (35) and being obtained from an array of crystalline defects and/or strain fields created within a crystalline region (16) located in the vicinity of a bonding interface (15) between two crystalline elements (11, 12) whose crystalline lattices have a twist and/or tilt angle and/or have interfacial lattice mismatch, able to condition the period (38) of the array of bumps (3). The period (38) of the array, the height (36) of the bumps and the size of their support zone (35) being adjusted so that the continuous layer (40) has a critical thickness that is greater than that obtained using epitaxy without the bumps.

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