Simplified method of fabricating lightly doped drain insulated g

Details Simplified method of fabricating lightly doped drain insulated g Simplified method of fabricating lightly doped drain insulated g

1988-04-27

1990-05-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437105, 437186, 437 26, 357 234, 357 233, H01L 21265, H01L 21203

Patent

active

049238248

ABSTRACT:
A lightly doped drain in an IGFET is provided by fabricating the transistor in a epitaxial layer lightly doped in the conductivity type of the channel for the device. The laterally reduced dopant concentration of the drain, and a lightly doped source if desired, is provided by leaving portions of the epitaxial layer unmodified.

REFERENCES:
patent: 3959025 (1976-05-01), Polinsky
patent: 4038107 (1977-07-01), Marr et al.
patent: 4087902 (1978-05-01), Feltner
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4251828 (1981-02-01), Sakurai
patent: 4315781 (1982-02-01), Henderson
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4513303 (1985-04-01), Abbas et al.
patent: 4546534 (1985-10-01), Nicholas
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4599118 (1986-07-01), Han et al.
patent: 4649629 (1987-03-01), Miller et al.
patent: 4656492 (1987-04-01), Sunami et al.
patent: 4660062 (1987-04-01), Nishizawa et al.
patent: 4680603 (1987-07-01), Wei et al.
patent: 4691433 (1987-09-01), Pimbley et al.
patent: 4703551 (1987-11-01), Szluk et al.
patent: 4789644 (1988-12-01), Meda
patent: 4795718 (1989-01-01), Beitman
Magdo et al., "Fabricating Complimentary MOS Transistors", IBM Technical Disclosure Bulletin, vol. 15, No. 6, 11/1972, pp. 1767-1768.

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