Simplified magnetic memory cell

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C257S295000, C257S421000

Reexamination Certificate

active

07056749

ABSTRACT:
An exemplary magnetic memory cell comprises a ferromagnetic cladding, the cladding at least partially surrounding a non-magnetic region, a spacer layer over the ferromagnetic cladding, and a ferromagnetic data layer over at least a portion of the spacer layer.

REFERENCES:
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6358757 (2002-03-01), Anthony
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6559511 (2003-05-01), Rizzo
patent: 6707083 (2004-03-01), Hiner et al.
patent: 2005/0030786 (2005-02-01), Deak

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