Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-06-06
2006-06-06
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S295000, C257S421000
Reexamination Certificate
active
07056749
ABSTRACT:
An exemplary magnetic memory cell comprises a ferromagnetic cladding, the cladding at least partially surrounding a non-magnetic region, a spacer layer over the ferromagnetic cladding, and a ferromagnetic data layer over at least a portion of the spacer layer.
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