Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-03-06
2007-03-06
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S396000
Reexamination Certificate
active
11046057
ABSTRACT:
The present invention is related to the realization of a simplified bottom electrode stack for ferroelectric memory cells. More particularly, the invention is related to ferroelectric memory cells wherein the ferroelectric capacitor is positioned directly on top of a contact plug. The bottom electrode stack is prepared by depositing a ferroelectric film atop an Ir or Ru metal electrode layer, then annealing the ferroelectric layer in an oxygen ambient wherein the partial pressure of oxygen is controlled at a level sufficient to oxidize the ferroelectric layer but not at a level sufficient to oxidize the metal electrode layer.
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Everaert Jean-Luc
Lisoni Judit
Wouters Dirk
Interuniversitair Microelektronica Centrum (IMEC)
Knobbe Martens Olson & Bear LLP
Perkins Pamela E.
Smith Zandra V.
ST Microelectronics
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