Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2005-04-26
2005-04-26
Lebentritt, Michael S. (Department: 2824)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S145000
Reexamination Certificate
active
06885570
ABSTRACT:
The present invention is related to the realization of a simplified bottom electrode stack for ferroelectric memory cells. More particularly, the invention is related to ferroelectric memory cells wherein the ferroelectric capacitor is positioned directly on top of a contact plug. The bottom electrode stack is prepared by depositing a ferroelectric film atop an Ir or Ru metal electrode layer, then annealing the ferroelectric layer in an oxygen ambient wherein the partial pressure of oxygen is controlled at a level sufficient to oxidize the ferroelectric layer but not at a level sufficient to oxidize the metal electrode layer
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Everaert Jean-Luc
Lisoni Judit
Wouters Dirk
Interuniversitair Microelektronica Centrum vzw (IMEC vzw)
Knobbe Martens Olson & Bear LLP
Lebentritt Michael S.
Nguyen Tuan T.
STMicroelectronics
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