Metal treatment – Compositions – Heat treating
Patent
1983-01-31
1985-04-23
Roy, Upendra
Metal treatment
Compositions
Heat treating
29577C, 29571, 29576B, 148187, 357 43, 357 91, H01L 754, H01L 2978
Patent
active
045128154
ABSTRACT:
In a monolithic semiconductor integrated circuit, conventional bipolar transistors are fabricated along with thin ion implanted junction field effect transistors, to create BIFET structures. After the conventional isolation diffusion, the surface oxide is stripped off and the semiconductor wafer ion implanted with slow diffusing impurities of a conductivity type, the same as the undiffused surface material. Then the bipolar transistors, along with the junction field effect transistors, are fabricated using conventional oxide masked diffusion processes. The field effect device sources and drains employ the base diffusions of the bipolar transistors while the gate contact is achieved with an emitter diffusion. The field effect device channels are formed at a depth substantially greater than that of the impurities deposited in the original ion implant. If desired, an ion implanted top gate can be established over the channel. The wafer is then annealed and processed in accordance with conventional techniques. Since the original ion implant covers the entire surface of the circuit, it will act as a field inversion prevention layer thus, improving the circuit reliability. The field effect devices can be fabricated with one less masking step when compared with the prior processes.
REFERENCES:
patent: 4108686 (1978-08-01), Jacobus, Jr.
patent: 4176368 (1979-11-01), Compton
patent: 4346512 (1982-08-01), Liang et al.
patent: 4362574 (1982-12-01), Gevondyan
Ma et al, IBM-TDB, 16, (1973), 2287.
Antipov, IBM-TDB, 18, (1975), 1401.
Hollins Brian E.
Khadder Wadie N.
Wang Jia T.
National Semiconductor Corporation
Pollock Michael J.
Roy Upendra
Winters Paul J.
Woodward Gail W.
LandOfFree
Simplified BIFET process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Simplified BIFET process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Simplified BIFET process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-35644