Simox materials through energy variation

Details Simox materials through energy variation Simox materials through energy variation

1990-12-14

1993-03-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 26, 437 62, H01L 21265

Patent

active

051963558

ABSTRACT:
A method of manufacturing SIMOX heterostructures using a single implant sequence and an increasing range of ion beam energies is disclosed. The method produces SIMOX materials having thin, continuous buried oxide layers having sharp interfaces and which are substantially free of silicon islands.

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Hemment et al., Nuclear Instruments and Methods in Physical Research, vol. B39, pp. 210-214 (1989), Nucleation and Growth . . . .
Ghandhi, "VLSI Fabrication Principles", John Wiley & Sons, Inc., 1983, pp. 346-348.

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