Silver-selenide/chalcogenide glass stack for resistance...

Details Silver-selenide/chalcogenide glass stack for resistance... Silver-selenide/chalcogenide glass stack for resistance...

2009-12-03

2011-12-20

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257SE45002

Reexamination Certificate

active

08080816

ABSTRACT:
The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GexSe100-xcomposition.

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