Silver, gallium, and oxygen contact for indium phosphide

Details Silver, gallium, and oxygen contact for indium phosphide Silver, gallium, and oxygen contact for indium phosphide

1975-03-31

1976-08-24

Larkins, William D.

357 67, H01L 2946, H01L 4700

Patent

active

039770150

ABSTRACT:
A semiconductor transferred electron device of the kind which includes indium phosphide as a major constituent is provided with a cathode consisting of oxidized silver gallium. The cathode preferably contains 4 times more silver than gallium by weight, and the oxygen content is preferably from 2 to 20 atomic per cent of the gallium content of the cathode. This improved device provides high electrical to microwave conversion efficiencies for a high proportion of devices produced together in any given batch.

REFERENCES:
patent: 3544854 (1970-12-01), Cox et al.
patent: 3667003 (1972-05-01), Hilsum et al.
patent: 3745071 (1973-07-01), Mitsui
patent: 3767482 (1973-10-01), Kock et al.

Affiliated with

Also associated with

Rating

Silver, gallium, and oxygen contact for indium phosphide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silver, gallium, and oxygen contact for indium phosphide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silver, gallium, and oxygen contact for indium phosphide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-782429