Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2005-03-29
2005-03-29
Peng, Kuo-Liang (Department: 1712)
Stock material or miscellaneous articles
Composite
Of silicon containing
C528S039000, C528S012000, C556S457000, C556S482000, C427S387000
Reexamination Certificate
active
06872456
ABSTRACT:
This invention pertains to a siloxane resin composition comprising R1SiO3/2siloxane units, R2SiO3/2siloxane units and (R3O)bSiO(4-b)/2siloxane units wherein R1is an alkyl group having 1 to 5 carbons, hydrogen, or mixtures thereof; R2is a monovalent organic group having 6 to 30 carbons; R3is a branched alkyl group having 3 to 30 carbons, b is from 1 to 3; and the siloxane resin contains from 2.5 to 85 mole percent R1SiO3/2units, 2.5 to 50 mole percent R2SiO3/2units and 5 to 95 mole percent (R3O)bSiO(4-b)/2units. The siloxane resin is useful to make insoluble porous resin and insoluble porous coatings. Heating a substrate coated with the siloxane resin at a sufficient temperature effects removal of the R2and R3O groups to form an insoluble insoluble porous coating having a porosity of 1 to 60 volume percent and a dielectric constant in the range of 1.5 to 3.0.
REFERENCES:
patent: 3615272 (1971-10-01), Collins et al.
patent: 3730743 (1973-05-01), Mcleod
patent: 4756977 (1988-07-01), Haluska et al.
patent: 5446088 (1995-08-01), Haluska
patent: 6022814 (2000-02-01), Mikoshiba et al.
patent: 6143360 (2000-11-01), Zhong
patent: 6184260 (2001-02-01), Zhong
patent: 6197913 (2001-03-01), Zhong
patent: 6231989 (2001-05-01), Chung et al.
patent: 6232424 (2001-05-01), Zhong et al.
patent: 6313045 (2001-11-01), Zhong et al.
patent: 6359096 (2002-03-01), Zhong et al.
patent: 0 997 497 (2000-03-01), None
patent: 1 095 958 (2001-02-01), None
patent: 5-333553 (1993-12-01), None
patent: WO 9849721 (1998-11-01), None
U.S. Appl. No. 09/915,899.*
U.S. Appl. No. 09/915,903.*
U.S. Appl. No. 09/723,051.*
U.S. Appl. No. 09/425,901.*
U.S. Appl. No. 09/951,819.*
U.S. Appl. No. 09/951,665.*
Journal of Materials Chemistry; “Preparation of low density poly (methylsilsesquioxane)s for LSI interlayer dielectrics with low dielectric constant. Fabrication of Angstrom size pores prepared by baking trifluoropropylsilyl copolymers”, Satoshi Mikoshiba and Shuzi Hayase, 1999, 9, 591-598.
Boisvert Ronald Paul
Bujalski Duane Raymond
Su Kai
Dow Corning Corporation
Peng Kuo-Liang
Severance Sharon K.
LandOfFree
Siloxane resins does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Siloxane resins, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Siloxane resins will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3412581