Silicon waveguide with monolithically integrated Schottky barrie

Details Silicon waveguide with monolithically integrated Schottky barrie Silicon waveguide with monolithically integrated Schottky barrie

1987-05-14

1989-08-15

James, Andrew J.

Wave transmission lines and networks

Automatically controlled systems

With control of equalizer and/or delay network

357 30, 333103, 333157, 333164, H01L 2948, H01L 2714

Patent

active

048579734

ABSTRACT:
The invention comprises a Schottky barrier type infrared photodetector which is monolithically integrated on a silicon waveguide. A Schottky barrier contact is positioned directly on a silicon waveguide to absorb grazing incidence optical signals passing through the waveguide. The Schottky contact is operated in the avalanche or reverse bias mode to generate a useable electrical signal.

REFERENCES:
patent: Re29578 (1978-03-01), Javan
patent: 4244750 (1981-01-01), Chenevas-Paule et al.
patent: 4322695 (1985-03-01), Fleming et al.
patent: 4394571 (1983-07-01), Jurisson
patent: 4398344 (1983-08-01), Gould
patent: 4467340 (1984-08-01), Rode et al.
patent: 4485389 (1984-11-01), Ovshinsky et al.
patent: 4496964 (1985-01-01), Tsubouchi et al.
patent: 4531055 (1985-07-01), Shepherd, Jr. et al.
patent: 4533933 (1985-08-01), Pellegrini et al.
patent: 4543442 (1985-09-01), Alcorn et al.
patent: 4568897 (1986-02-01), Stern et al.

Affiliated with

Also associated with

Rating

Silicon waveguide with monolithically integrated Schottky barrie does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon waveguide with monolithically integrated Schottky barrie, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon waveguide with monolithically integrated Schottky barrie will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-125408